Semiconductor laser having an active layer and cladding layer

Details Semiconductor laser having an active layer and cladding layer Semiconductor laser having an active layer and cladding layer

1987-10-28

1989-08-08

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

048560138

ABSTRACT:
A laser has an active layer formed on a prepared substrate, a cladding layer on the active layer and a contact layer on the cladding layer. The active layer and contact layer are formed of a semiconductor material of elements from Groups III-V. The contact layer and cladding layer are formed into an elongated projecting rib wherein the cladding layer has a remaining planar portion disposed across the active layer. An insulating layer of semiconductor of elements from Group II-VI is formed on each side of the rib supported on the remaining cladding layer.

REFERENCES:
patent: 4121179 (1978-10-01), Chinone et al.
patent: 4607369 (1986-08-01), Niina et al.
patent: 4608695 (1986-08-01), Oda et al.
patent: 4615032 (1986-09-01), Holbrook et al.
patent: 4679200 (1987-07-01), Matsui et al.
patent: 4740976 (1988-04-01), Kajimura et al.
Hanamitsu et al; "Transient Spectra . . . Double-Heterostructure Lasers"; J. Appl. Phys. 51 (12); Dec. 1980; pp. 6415-6417.

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