Semiconductor laser having a transparent light emitting section,

Details Semiconductor laser having a transparent light emitting section, Semiconductor laser having a transparent light emitting section,

1996-11-01

1998-05-26

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

438 33, 438 44, 372 46, H01S 319, H01L 2120

Patent

active

057578338

ABSTRACT:
A semiconductor laser is produced by forming a laser activation section and a light emitting section having an InGaAsP layer as a quantum well on a GaAs substrate according to metal organic chemical vapor deposition by using a selective area growth mask, in such a manner that the laser activation section and the light emitting section have different film thicknesses. The laser activation section includes a laser activation layer whose oscillation wavelength is set to 0.8 to 1.1 .mu.m, and the light emitting section includes an optical waveguide layer having a broader forbidden band than the laser activation layer.

REFERENCES:
patent: 5426658 (1995-06-01), Kaneno et al.
patent: 5486490 (1996-01-01), Kakimoto
patent: 5574289 (1996-11-01), Aoki et al.
patent: 5657338 (1997-08-01), Kitamura
Article entitled "High power, A1GaAs buried heterostructure lasers with flared waveguides", by D.F. Welch et al, Appl. Phys. Lett., vol. No. 50, No. 5, 2 Feb. 1987.

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