Semiconductor laser having a structure of photonic bandgap mater

Details Semiconductor laser having a structure of photonic bandgap mater Semiconductor laser having a structure of photonic bandgap mater

1996-05-01

1997-11-04

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 50, 372 92, 372 99, H01S 30941

Patent

active

056848170

ABSTRACT:
Disclosed is a semiconductor laser that is constituted by at least one active layer sandwiched between two confinement layers with P and N type doping to constitute a PN junction. In at least one of the confinement layers and/or the active layer, holes are designed on each side of the cavity so as to form structures of photonic bandgap material along the lateral walls of the cavity and the ends of the cavity.

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T. Krauss, et al. "Fabrication of 2-D Photonic Bandgap Structures in GaAs/AlGaAs", Electronics Letters, vol. 30, No. 17, Aug. 18, 1994, pp. 1444-1446.
E. Yablonovitch, et al. "Photonic Band Structure: The Face-Centered-Cubic Case Employing Nonspherical Atoms", Physical Review Letters, vol. 67, No. 17, Oct. 21, 1991, pp. 2295-2298.

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