Semiconductor laser having a multiple quantum well structure dop

Details Semiconductor laser having a multiple quantum well structure dop Semiconductor laser having a multiple quantum well structure dop

1987-04-23

1989-11-14

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372704, H01S 319

Patent

active

048812358

ABSTRACT:
In a well-known semiconductor laser, a multiple quantum well type active layer consisting of barrier layers and active layers or well layers, each of which has a thickness less than the de Broglie wavelength of electrons, is doped with an impurity, and the impurity density is made higher in the barrier layer than in the well layer. Further, in a case where the multiple quantum well active layer is held between p-type and n-type cladding layers, the well layer is undoped, the part of the barrier layer lying in contact with the well layer is undoped, and the other part of the barrier layer close to the p-type cladding layer is put into the n-conductivity type while that of the barrier layer close to the n-type cladding layer is put into the n-conductivity type. Desirably, the impurity density should range from about 1.times.10.sup.18 to about 1.times.10.sup.19 cm.sup.- 3.

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