Coherent light generators – Particular active media – Semiconductor
Patent
1988-11-17
1990-06-05
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
H01S 319
Patent
active
049320335
ABSTRACT:
A semiconductor laser having a laser resonator structure having a substrate with a trapezoidal projection forming on both sides of an upper base an inclined surface extending along a resonating direction of a resonator, a first semiconductor layer of a first or second conductivity type formed on the substrate, an active layer for generating a laser beam, a second semiconductor layer formed on the substrate and to which an impurity of a convertible conductivity type is doped with a portion of the second semiconductor layer above the inclined surface of the substrate having the first conductivity type and the other portion having the second conductivity type, and a pair of electrodes causing a current to flow through the active layer.
REFERENCES:
patent: 4653057 (1987-03-01), Oirschot
patent: 4682337 (1987-07-01), Amann
patent: 4719633 (1988-01-01), Yoshikawa et al.
patent: 4737961 (1988-04-01), Mori et al.
patent: 4785457 (1988-11-01), Asbeck et al.
D. L. Miller and P. M. Asbeck, "Plane-Selective Doped AlGaAs/GaAs Double Heterostructure Light Emitting Diode"*, (abstract only), Fourth International Conference Molecular Beam Epitaxy, Sep. 7-10, 1986 (*Miller, Asbeck paper presented).
Miyazawa Seiichi
Ohtsuka Mitsuru
Canon Kabushiki Kaisha
Davie James W.
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