Semiconductor laser having a burying layer of a II-VI compound

Details Semiconductor laser having a burying layer of a II-VI compound Semiconductor laser having a burying layer of a II-VI compound

1983-03-30

1986-08-19

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 48, H01S 319

Patent

active

046073698

ABSTRACT:
A semiconductor laser includes an oscillation layer comprising a first clad layer, an active layer and a second clad layer which are comprised of gallium aluminum arsenide and deposited, in this order, on a semiconductor substrate. A buried cap layer in a stripe geometry for narrowing a width of a current path is deposited on a second clad layer. A burying layer comprised of II-VI compound such as zinc selenide, zinc sulfide and the like is formed on the second clad layer other than the portion on which the cap layer is formed, so that the cap layer is buried. The buried layer is formed utilizing a low temperature deposition such as a molecular beam epitaxy.

REFERENCES:
patent: 4033796 (1977-07-01), Burnham et al.
patent: 4121177 (1978-10-01), Tsukada et al.
patent: 4481631 (1984-11-01), Henry et al.

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