Semiconductor laser having a boundary-region absorption layer

Details Semiconductor laser having a boundary-region absorption layer Semiconductor laser having a boundary-region absorption layer

1989-01-30

1989-09-26

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, 357 17, H01S 319, H01L 3300

Patent

active

048706507

ABSTRACT:
A semiconductor laser having a buried hetero junction, more particularly a DCPBH laser, in which the active layer (3) is located in a "mesa", which is laterally bounded by a boundary region comprising at least one blocking layer (6) having a larger band gap than the active layer. The boundary region includes an absorption layer (13) having a smaller band gap than the active layer, this absorption layer being located at such a small lateral distance from the active layer that it lies within the amplification profile of the first-order lateral oscillation mode. As a result, the first and higher oscillation modes as well as the thyristor effect are suppressed.

REFERENCES:
patent: 4597085 (1986-05-01), Mito et al.
patent: 4692206 (1987-09-01), Kaneiwa et al.

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