Semiconductor laser geometry for broad-angle far-field addressin

Details Semiconductor laser geometry for broad-angle far-field addressin Semiconductor laser geometry for broad-angle far-field addressin

1995-08-16

1997-05-06

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 24, 372 92, H01S 319, H01S 308

Patent

active

056278527

ABSTRACT:
A semiconductor laser apparatus for broad-angle far-field addressing is disclosed. The apparatus comprises a laser block with lasing cavities. The lasing cavity mirrors are made by dry-etching of the semiconductor block. The width of a lasing cavity is defined by a p contact pad on the laser block; further lateral confinement of current to the cavity is achieved by proton implantation followed by etching of the proton layer. The apparatus achieves quasi-continuous beam steering with a total steering angle of 80.degree. and with 11 resolvable spots.

REFERENCES:
patent: 5228050 (1993-07-01), LaCourse et al.
patent: 5384797 (1995-01-01), Welch et al.
patent: 5402436 (1995-03-01), Paoli
patent: 5495492 (1996-02-01), Toda
patent: 5524014 (1996-06-01), Kaminous et al.

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