Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Dopant introduction into semiconductor region
Patent
1997-09-04
1998-12-01
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Dopant introduction into semiconductor region
438 22, 438 46, 438 47, H01S 318, H01S 319
Patent
active
058438025
ABSTRACT:
A method for fabricating a multiple layer semiconductor device, such as a laser, using impurity-induced, or vacancy-enhanced, intermixing of semiconductor layers to selectively inactivate quantum well regions in the device.
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Beernink Kevin J.
Bour David P.
Paoli Thomas L.
Thornton Robert L.
Walker Jack
Bowers Jr. Charles L.
Christianson Keith
Xerox Corporation
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