Semiconductor laser for high optical output power with reduced m

Details Semiconductor laser for high optical output power with reduced m Semiconductor laser for high optical output power with reduced m

1985-09-06

1988-01-26

Wan, Gene

Coherent light generators

Particular active media

Semiconductor

372 50, H01S 319

Patent

active

047220880

ABSTRACT:
The semiconductor laser, which can be either electrically or optically pumped, characterized by quantum well structure for the body and by having a distance of the respective mirror structures from the end of the laser active zone which is dimensioned within tight limits. The structure provides a semiconductor laser in which problems with destruction or aging of the reflective properties of the mirror structure due to heating are reduced.

REFERENCES:
patent: 4349905 (1982-09-01), Ackley
patent: 4371966 (1983-02-01), Scifres et al.
patent: 4546480 (1985-10-01), Burnham et al.
patent: 4594718 (1986-06-01), Scifres et al.
Yonezu et al, "An AlGaAs Window Structure Laser" IEEE Journal of Quantum Electronics, v. QE-15, No. 8, Aug. 1979, pp. 775-781.
Yonezu et al, "High Optical Power Density Emission from a `Window-Stripe` AlGaAs Double-Heterostructure Laser" Applied Physics Letters, V. 34(10), May 15, 1979, pp. 637-639.
Iwamura et al, "A Segmented Electrode Multi-Quantum-Well Laser Diode" Japanese Journal of Applied Physics, V. 22, No. 11, Nov. 1983, pp. L751-L753.

Affiliated with

Also associated with

Rating

Semiconductor laser for high optical output power with reduced m does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser for high optical output power with reduced m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser for high optical output power with reduced m will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1472062