Semiconductor laser end-facet coatings for use in solid or liqui

Details Semiconductor laser end-facet coatings for use in solid or liqui Semiconductor laser end-facet coatings for use in solid or liqui

1984-01-03

1985-04-09

Smith, John D.

Coherent light generators

Particular active media

Semiconductor

427 82, 427162, H01S 318

Patent

active

045106070

ABSTRACT:
An improvement for a semiconductor laser allows the facet reflectivity to be modified to compensate for the presence of a liquid or transparent solid medium having an index of refraction n.sub.m. A first dielectric coating is disposed on an end-facet of the semiconductor laser and has an index of refraction n.sub.1. A second dielectric coating is disposed on the first dielectric coating and has an index of refraction n.sub.2. The materials of the dielectric coatings are selected such that the fraction n.sub.1
.sub.2 =.sqroot.n.sub.m. Thus the problems associated with reductions of laser facet reflectivity due to being in contact with a surrounding medium which optically is very different from air is overcome.

REFERENCES:
patent: 3943462 (1976-03-01), Thompson
patent: 4092659 (1978-05-01), Ettenberg
patent: 4317086 (1982-02-01), Scifres
patent: 4337443 (1982-06-01), Umeda
Ettenberg, "A New Dielectric Facet Reflector for Semiconductor Lasers", A. Phys. Lett. 32(11), Jun. 1, 1978, p. 724.

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