Semiconductor laser element with optical waveguide layer...

Details Semiconductor laser element with optical waveguide layer... Semiconductor laser element with optical waveguide layer...

2007-11-27

2007-11-27

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S045010

Reexamination Certificate

active

11073519

ABSTRACT:
In a semiconductor laser element: a lower cladding layer of In0.49(Alx1Ga1-x1)0.51(x2<x1<1) of a first conductive type which lattice-matches with GaAs; a lower optical waveguide layer of In0.49(Alx2Ga1-x2)0.51P (0<x2<x1) which lattice-matches with GaAs; an active layer; an upper optical waveguide layer of In0.49(Alx2Ga1-x2)0.51P (0<x2<x1) which lattice-matches with GaAs; and an upper cladding layer of In0.49(Alx1Ga1-x1)0.51P (x2<x1<1) of a second conductive type which lattice-matches with GaAs are formed in this order on a substrate of GaAs. The total thickness of the lower optical waveguide layer, the active layer, and the upper optical waveguide layer is 0.30 micrometers or greater.

REFERENCES:
patent: 5157679 (1992-10-01), Kondow et al.
patent: 5177757 (1993-01-01), Tsugami
patent: 5502739 (1996-03-01), Kidoguchi et al.
patent: 5600667 (1997-02-01), Kidoguchi et al.
patent: 6798808 (2004-09-01), Konushi et al.
patent: 5-243669 (1993-09-01), None

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