Semiconductor laser element with excellent high-temperature char

Details Semiconductor laser element with excellent high-temperature char Semiconductor laser element with excellent high-temperature char

1994-08-17

1996-04-23

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 49, 385 49, 385 88, H01S 319, G02B 630

Patent

active

055110894

ABSTRACT:
In a semiconductor laser element which has a semiconductor block including a first end surface, a second end surface opposite to the first end surface, and a principal surface contiguous to the first and the second end surfaces, the internal end surface is defined by forming a groove from the principal surface, creating an internal end surface opposite to the second end surface and nearer to the second end surface than the first end surface is. The internal end surface serves as a front laser beam emitting surface while the second end surface serves as a rear laser beam emitting surface. Thus, an optical resonator is provided between the internal and the second end surfaces. The internal end surface is spaced apart from the second end surface by a length of 150 .mu.m, which is different from a length of the semiconductor block.

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