Semiconductor laser element with a single longitudinal oscillati

Details Semiconductor laser element with a single longitudinal oscillati Semiconductor laser element with a single longitudinal oscillati

1987-11-12

1990-07-10

Sikes, William L.

Coherent light generators

Particular resonant cavity

Distributed feedback

372 45, 372 46, H01S 308, H01S 319

Patent

active

049411489

ABSTRACT:
A semiconductor laser element of the present invention provides a double hetero junction structure having two clad layers and an active layer formed between the two clad layers. High resistance regions are formed vertically to the light propagating direction at almost the same interval as the light wavelength in at least one of the two clad layers. The high resistance regions form a periodic current blocking structure so the semiconductor laser element may oscillate in a single longitudinal mode even in a non-steady state operation.

REFERENCES:
patent: 4023993 (1977-05-01), Scifres et al.
patent: 4653058 (1987-03-01), Akiba et al.
patent: 4694461 (1987-09-01), Yano et al.
Harris et al; "Distributed Feedback Semiconductor Injection Laser"; vol. 16, No. 1, Jun. 1976; IBM Tech. Disclosure Bulletin, pp. 171-172.

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