Semiconductor laser element suitable for production by a MO-CVD

Details Semiconductor laser element suitable for production by a MO-CVD Semiconductor laser element suitable for production by a MO-CVD

1987-03-23

1988-03-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437104, 437133, 372 45, 372 46, 357 17, H01L 700, H01L 21208, H01S 319

Patent

active

047343850

ABSTRACT:
A semiconductor laser element includes a first cladding layer of first conductivity type provided on a semiconductor substrate of the first conductivity type; a current blocking layer of a second conductivity type provided on the first cladding layer having a stripe groove from which the first cladding layer and is exposed at the bottom thereof; a light guide layer of the first conductivity type provided covering the current blocking layer, the stripe groove, and the first cladding layer exposed from the groove; an active layer provided on the light guide layer curved in the neighborhood of the stripe groove, whose refractive index is larger than that of the light guide layer; and a second cladding layer of the second conductivity type provided on the active layer, whose refractive index is smaller than that of the active layer.

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Dupuis et al., "Single-. . . Ga.sub.1-x Al.sub.x As-GaAs Channel-Guide Lasers Grown by Metalorganic Chemical Vapor Deposition", Appl. Phys. Lett., 33(8), Oct. 15, 1978, pp. 724-726.
Yamamoto et al., "Visible GaAlAs U-Channeled Substrate Inner Stripe Laser . . . ", Appl. Phys. Lett., 40(5), Mar. 1, 1982, pp. 372-374.

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