Semiconductor laser element, semiconductor etchant, and...

Details Semiconductor laser element, semiconductor etchant, and... Semiconductor laser element, semiconductor etchant, and...

2005-02-08

2005-02-08

Paladini, Albert W. (Department: 2125)

Coherent light generators

Particular active media

Semiconductor

C372S042000, C257S099000, C257S101000

Reexamination Certificate

active

06853664

ABSTRACT:
The semiconductor laser element comprises, from bottom to top, the p-AlxGa1−xAs upper clad layer, p-AlyGa1−yAs resistance control layer, and p-GaAs cap layer (where x>y>0.2). A portion of only the resistance control layer and cap layer is selectively etched. The etchant used for this etching is a mixture of organic acid and hydrogen peroxide based mixture, has such a composition such that the ratio of dissolution rate of the upper clad layer to the cap layer is between 10 and 20, and pH is between 7.4 and 7.6.

REFERENCES:
patent: 6549554 (2003-04-01), Shiojima et al.

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