Semiconductor laser element, method of fabrication thereof,...

Details Semiconductor laser element, method of fabrication thereof,... Semiconductor laser element, method of fabrication thereof,...

2007-11-13

2007-11-13

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010

Reexamination Certificate

active

10724570

ABSTRACT:
The present invention provides a semiconductor laser element, a method of fabrication thereof, and a multi-wavelength monolithic semiconductor laser device that achieve self-sustained pulsation up to a high output level and achieve self-sustained pulsation over a wide output range. A semiconductor laser element that exhibits self-sustained pulsation in a predetermined output region, said semiconductor laser element comprising: a substrate; a first conductive type clad layer formed on said substrate; an active layer formed on said first conductive type clad layer for emitting light by current injection; a second conductive type first clad layer formed on said active layer; and a stripe-shaped second conductive type second clad layer formed on said second conductive type first clad layer in a first direction, in such a manner that the cross-sectional surface of said stripe-shaped second conductive type second clad layer in a direction perpendicular to said first direction has a shape having an upper edge and a lower edge that face each other and side edges that connect between said upper edge and said lower edge, where the minimum width thereof is at least 70% but no more than 100% of the maximum width.

REFERENCES:
patent: 5701322 (1997-12-01), Nagai
patent: 5822348 (1998-10-01), Fujii
patent: 6031858 (2000-02-01), Hatakoshi et al.
patent: 6266354 (2001-07-01), Chino et al.
patent: 6400742 (2002-06-01), Hatakoshi et al.
patent: 6757311 (2004-06-01), Abe
patent: 2001/0043632 (2001-11-01), Ohya et al.

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