Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2004-11-09
2009-02-17
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
Reexamination Certificate
active
07492801
ABSTRACT:
A semiconductor laser element has a lower cladding layer of first conductivity type, an active layer, a first upper cladding layer of second conductivity type, and a second upper cladding layer of second conductivity type, which are stacked in this order on a semiconductor substrate of first conductivity type. The laser element further has a third upper cladding layer of second conductivity type and a contact layer of second conductivity type, which constitute a stripe-shaped ridge structure. A second-conductivity-type doping concentration of the second upper cladding layer is lower than those of the first and third upper cladding layers and is not higher than 1×1017cm−3. A sum total of layer thicknesses of the first and second upper cladding layers is 0.3-1.5 μm, inclusive. An electrode layer forms an ohmic junction with the contact layer, and a Schottky junction with the second upper cladding layer.
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Kawanishi Hidenori
Kishimoto Katsuhiko
Birch & Stewart Kolasch & Birch, LLP
Harvey Minsun
Sharp Kabushiki Kaisha
Stafford Patrick
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