Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2008-04-29
2008-04-29
Harvey, Minsun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S043010, C372S046010
Reexamination Certificate
active
11060559
ABSTRACT:
A semiconductor laser element having a structure in which at least one AlGaInP or GaInP layer is formed above a GaAs substrate. The crystal orientation of the principal plane of the GaAs substrate is tilted from (100) toward (111). When the total thickness of the at least one AlGaInP or GaInP layer is 1 micrometer or smaller, the tilt angle of the crystal orientation of the principal face is 8 to 54.7 degrees. When the total thickness of the at least one AlGaInP or GaInP layer is 1 micrometer or greater, the tilt angle of the crystal orientation of the principal face is 13 to 54.7 degrees.
REFERENCES:
patent: 4974231 (1990-11-01), Gomyo
patent: 5157679 (1992-10-01), Kondow et al.
patent: 5263040 (1993-11-01), Hayakawa
patent: 5465266 (1995-11-01), Bour et al.
patent: 5621748 (1997-04-01), Kondo et al.
patent: 5684818 (1997-11-01), Anayama et al.
patent: 5717709 (1998-02-01), Sasaki et al.
patent: 5799027 (1998-08-01), Anayama et al.
patent: 5881086 (1999-03-01), Miyazawa
patent: 6134368 (2000-10-01), Sakata
patent: 6219365 (2001-04-01), Mawst et al.
patent: 6356572 (2002-03-01), Tanaka et al.
patent: 6444485 (2002-09-01), Kidoguchi et al.
patent: 6614059 (2003-09-01), Tsujimura et al.
patent: 6653248 (2003-11-01), Kean et al.
patent: 2002/0027935 (2002-03-01), Anayama
patent: 2002/0149030 (2002-10-01), Kean et al.
patent: 2004/0041162 (2004-03-01), Shimoyama et al.
patent: 0 325 275 (1989-07-01), None
patent: 1 187 277 (2002-03-01), None
Toshiaki Fukunaga et al., “Highly Reliable Operation of High-Power InGaAsP/InGaP/A1GaAs 0.8 μm Separate Confinement Heterostructure Lasers”, Japanese Journal of Applied Physics, vol. 34, No. 9B, pp. 1175-1177, 1995.
Hayakawa T:, “High reliability and facet temperature reduction in high-power 0.8 mulm A1 free active-region diode lasers”, Proceedings of the SPIE—the International Society for Optical Engineering SPIE-Int. Soc. Opt. Eng USA, vol. 4287, 2001, pp. 103-110, XP002363361.
Earles T et al., “narrow spectral width (<1A FWHM) 1.1-W cw operation form 100-mulm stripe DFB diode lasers (lambda !=0.893 mulm) with A1-free optical-confinement region”, Technical Digest Summaries of Papers Presented at the Conference on Lasers and Electro-Optics Conference Edition 1998 Technical Digest Series, vol. 6 (IEEE Cat. NO98CH36178) Opt. Soc. America Washington, DC, USA, 1998, pp. 38-39, XP002363362.
Kondo M et al: “Crystal Orientation Dependence of Impurity Dopant Incorporation in Movpe-Grown III-V Materials” Journal of Crystal Growth, Elsevier, Amsterdam, NL vol. 124, No. ¼, Nov. 1, 1992, pp. 449-456.
FUJIFILM Corporation
Harvey Minsun Oh
Nguyen Phillip
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