Semiconductor laser element capable of changing emission wavelen

Details Semiconductor laser element capable of changing emission wavelen Semiconductor laser element capable of changing emission wavelen

1991-11-14

1992-10-13

Epps, Georgia Y.

Coherent light generators

Particular beam control device

Tuning

372 50, 372 96, 385 2, H01S 310

Patent

active

051557363

ABSTRACT:
A semiconductor laser element capable of changing an oscillation wavelength over a wide range without increasing a threshold current is disclosed. A wavelength selective filter capable of changing a selected wavelength over a wide range is also disclosed. The semiconductor laser element has a substrate and a laser resonator formed on the substrate by stacking semiconductor layers including an active layer and an optical waveguide layer of a superlattice structure. The resonator includes a first reflection portion, an active portion, a phase adjustment portion and second reflection portion which are juxtaposed in a resonance direction. Diffraction gratings are formed in the optical guide layer of the first and second reflection portions. Electrodes are independently formed in the active portion, the phase adjustment portion and the first and second reflection portions. Further, a method for driving the semiconductor laser is disclosed.

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patent: 4856005 (1989-08-01), De et al.
patent: 4873691 (1989-10-01), Uomi et al.
patent: 4885753 (1989-12-01), Okai et al.
patent: 4887274 (1989-12-01), Hayakawa et al.
patent: 4899361 (1990-02-01), Numai

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