Semiconductor laser element and semiconductor laser

Details Semiconductor laser element and semiconductor laser Semiconductor laser element and semiconductor laser

2006-02-14

2006-02-14

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular temperature control

Liquid coolant

C372S036000

Reexamination Certificate

active

06999486

ABSTRACT:
In a semiconductor laser element having a plurality of semiconductor layers formed on a substrate, a groove-form concave portion is formed on the surface of the substrate opposite to the surface having the semiconductor layers. The concave portion is filled with metal having a higher heat conductivity higher than the substrate. The semiconductor laser element achieves improved heat dissipation characteristics and high reliability even under high-output operation.

REFERENCES:
patent: 5105430 (1992-04-01), Mundinger et al.
patent: 5265113 (1993-11-01), Halldorsson et al.
patent: 5309457 (1994-05-01), Minch
patent: 5327444 (1994-07-01), Mooradian
patent: 5495490 (1996-02-01), Rice et al.
patent: 5608749 (1997-03-01), Kizuki
patent: 5812570 (1998-09-01), Spaeth
patent: 5828683 (1998-10-01), Freitas
patent: 5987043 (1999-11-01), Brown et al.
patent: 6097744 (2000-08-01), Takigawa et al.
patent: 6101206 (2000-08-01), Apollonov et al.
patent: 6108361 (2000-08-01), Fujihara et al.
patent: 6197375 (2001-03-01), Graebner et al.
patent: 6239033 (2001-05-01), Kawai
patent: 6281524 (2001-08-01), Yamamoto et al.
patent: 6597716 (2003-07-01), Takatani
patent: 6636538 (2003-10-01), Stephens
patent: 2001/0048114 (2001-12-01), Morita et al.
Appl. Phys. Lett 72 (1), Jan. 5, 1998, “:6.1 W continuous wave front-facet power from A1-free active-region (λ=805 nm) diode lasers”, J.K. Wade, et al.
Jpn. J. Appl. Phys. vol. 34 (1995) pp. L1175-L1177 Part 2, No. 9B, Sep. 15, 1995, “Highly Reliable Operation of High-Power InGaAsP/InGaP/A1GaAs 0.8 μm Separate Confinement Hererostructure Lasers”, Toshiaki Fukunaga, et al.
IEEE Journal of Quantum Electronics, vol. 28., No. 4, Apr. 1992, “Modular Microchannel Cooled Heatsinks for High Average Power Laser Fiode Arrays”, Ray Beach et al.
Jpn. J. Appl. Phys. vol. 37 (1998) pp. L1020-L1022 Part. 2, No. 9A/B, Sep. 15, 1998, “InGaN/GaN/A1GaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Trnsverse Mode”, Shuji Nakamura, et al.

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