Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-10-25
2005-10-25
Harvey, Minounch (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
Reexamination Certificate
active
06959026
ABSTRACT:
In a semiconductor laser element, a semiconductor layer interface116containing oxygen atoms is present above an active layer103in at least an internal region of a laser resonator. Also, the peak wavelength of photoluminescence of the active layer103in regions in the vicinity of end faces of the laser resonator is made shorter than that of the active layer in the internal region of the laser resonator. In the internal region of the laser resonator, vacancies (crystal defects) produced above and in the neighborhood of the semiconductor layer interface containing oxygen atoms are captured at this semiconductor layer interface. Diffusion of the vacancies to the active layer is thus suppressed.
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Harvey Minounch
Morrison & Foerster / LLP
Nguyen Phillip
Sharp Kabushiki Kaisha
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