Semiconductor laser element and method for producing same

Details Semiconductor laser element and method for producing same Semiconductor laser element and method for producing same

2008-03-11

2010-10-26

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular resonant cavity

Specified cavity component

C372S049010, C438S029000

Reexamination Certificate

active

07822094

ABSTRACT:
A semiconductor laser element realizes a high COD light output in broader range of reflection factor at a facet with high reliability. A semiconductor laser element has a multi-layered reflection film formed on at least one end facet of a resonator. An optical path length of each layer of said multi-layered reflection film is determined by (2m−1)·λ/4, where λ is oscillation wavelength, and m is positive integer). A high-refractive-index layer and a low-refractive-index layer are alternately stacked starting from a first layer adjacent to said semiconductor.

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