Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-03-08
2005-03-08
Harvey, Minsun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S046012
Reexamination Certificate
active
06865202
ABSTRACT:
There is provided a semiconductor laser element, which has a small capacitance outside a ridge portion and high response speed and is able to effect pulse oscillation with a satisfactory pulse waveform. On a GaAs substrate101, there are provided an n-type buffer layer102, an n-type first clad layer103, an MQW active layer104, a p-type second clad layer105, a p-type etching stop layer106that has an energy bandgap smaller than that of this second clad layer105, a p-type third clad layer107that constitutes a ridge portion and a p-type protective layer108. On both sides in the widthwise direction of the ridge portion are laminated a p-type spacer layer109, an n-type current light confining layer110, an n-type current confining layer111and a p-type flattening layer112. On these layers is laminated a p-type contact layer113. A depletion layer spreads into the spacer layer109when a bias voltage is applied. Therefore, a capacitance between the spacer layer109and the current light confining layer110is reduced, and a response speed during the pulse oscillation of the semiconductor laser element becomes fast.
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Chinese Office Action dated Jun. 11, 2004, with English translation.
Korean Office Action dated Jul. 28, 2004.
Harvey Minsun Oh
Morrison & Foerster / LLP
Nguyen Phillip
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