Semiconductor laser element

Details Semiconductor laser element Semiconductor laser element

1993-09-29

1994-10-11

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

053553845

ABSTRACT:
Disclosed herein is a semiconductor laser element comprising a first cladding layer, an optical guiding layer, an active layer and a second cladding layer disposed in this order or in reverse order on a semiconductor substrate, a refractive index of the optical guiding layer being larger than both refractive indexes of the first and second cladding layers, and a refractive index of the optical guiding layer is smaller than that of the active layer but larger than that of the first cladding layer, and a burying layer having a refractive index smaller than that of at least one of the first and second cladding layers being disposed on side faces other than laser-emitting faces of the optical guiding layer and the active layer.

REFERENCES:
patent: 4371966 (1983-02-01), Seifres et al.
patent: 4706254 (1987-11-01), Nejim et al.
patent: 4928285 (1990-05-01), Kushibe et al.
patent: 5212113 (1993-05-01), Azoulay et al.
Patent Abstracts of Japan, vol. 11, No. 75 Mar. 6 1987 & JP-A-61-232 297 (NEC) Oct. 16, 1986 (Abstract).
Sixth International Conference on Metalorganic Vapor Phase Epitaxy, Cambridge, Mass., Jun. 8-11,1992; Journal of Crystal Growth, Shimoyama et al: "Novel Selective Area Growth of AlGaAs and AlAs with HCl Gas by MOVPE," pp. 235-242.
Journal of Applied Physics, vol. 56, No. 9, Nov. 1, 1984, New York, pp. 2491-2496; Ohtoshi et al: "High-Power Visible GaAlAs Lasers with Self-Aligned Strip Buried Heterostructure".

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