Semiconductor laser diode with narrow lateral beam divergence

Details Semiconductor laser diode with narrow lateral beam divergence Semiconductor laser diode with narrow lateral beam divergence

2007-11-12

2009-10-13

Nguyen, Dung T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S087000

Reexamination Certificate

active

07602828

ABSTRACT:
The invention relates to high power broad-area semiconductor lasers incorporating a structure that provides both gain guiding and index guiding. The lateral width of the index guiding region is greater than the lateral width of the gain guiding region by at least 20 micron. This results in a high power broad-area semiconductor laser which has reduced lateral divergence of the output beam.

REFERENCES:
patent: 4144503 (1979-03-01), Itoh et al.
patent: 4965806 (1990-10-01), Ashby et al.
patent: 5438584 (1995-08-01), Paoli et al.
patent: 5499260 (1996-03-01), Takahashi et al.
patent: 6256330 (2001-07-01), LaComb
“Lateral Analysis of Quasi-Index-Guided injection Lasers: Transition from gain to Index Guiding”, Agrawal, J. of Lightwave Technology, vol. LT-2, No. 4, pp. 537-543, 1984.

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