Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-08-22
2006-08-22
Harvey, Minsun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S019000, C372S045013
Reexamination Certificate
active
07095769
ABSTRACT:
A semiconductor laser diode capable of achieving an improvement in kink level and an improvement in catastrophic optical damage (COD) level. The semiconductor laser diode includes a first-conductivity type semiconductor substrate, a first-conductivity type clad layer formed over the substrate, an active layer formed over the first-conductivity type clad layer, a second-conductivity type clad layer formed over the active layer, and provided with a ridge, and a light confining layer formed on the second-conductivity type clad layer, and made of a first-conductivity type semiconductor material, the light confining layer including higher-order mode absorption layers having an energy band gap lower than optical energy produced in the active layer, and refractive index control layers having a refractive index lower than that of the higher-order mode absorption layers. The higher-order mode absorption layers and refractive index control layers are laminated in an alternate manner.
REFERENCES:
patent: 5202895 (1993-04-01), Nitta et al.
patent: 5383214 (1995-01-01), Kidoguchi et al.
patent: 5521935 (1996-05-01), Irikawa
patent: 6172998 (2001-01-01), Horie et al.
patent: 6366595 (2002-04-01), Bowler
patent: 6400742 (2002-06-01), Hatakoshi et al.
patent: 6807213 (2004-10-01), Shimoyama et al.
patent: 6947461 (2005-09-01), Nakayama
patent: 6978067 (2005-12-01), Herbert et al.
patent: 2002/0016014 (2002-02-01), Kimura
patent: 0 798 832 (1997-10-01), None
patent: 62001290 (1987-01-01), None
patent: 06334260 (1994-12-01), None
patent: 07022695 (1995-01-01), None
Kim In Eung
Pak Gueorgui
Yoon Sang Ho
Harvey Minsun Oh
Lowe Hauptman & Berner LLP.
Rogers Kelly
Samsung Electro-Mechanics Co. Ltd.
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