Semiconductor laser diode multi-chip module

Details Semiconductor laser diode multi-chip module Semiconductor laser diode multi-chip module

1999-03-04

2001-07-31

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S729000

Reexamination Certificate

active

06268653

ABSTRACT:

FIELD OF THE INVENTION
This invention relates to high power, semi-conductor, laser diodes and, more particularly, to a stress-reduced packaging arrangement for such diodes.
BACKGROUND OF THE INVENTION
High power laser diodes are commercially available. A failure mode for such diodes is traceable to stress introduced by the solder used to mount the diodes on a suitable substrate. In order to avoid stress, low temperature solders are used. But low temperature solders constrains the power output which could otherwise be significantly higher. Much higher power output could be obtained if the diodes could be mounted with high temperature solders. Unfortunately, the stress induced by the high temperature solders lead to unacceptable device failures.
BRIEF DESCRIPTION OF THE INVENTION
In accordance with the principles of this invention, a laser diode is bonded to a substrate structured to permit high temperature solder to be used to affix the diode. The substrate is made from several layers comprising copper beryllium oxide-copper in a lamellate structure which results in the copper exhibiting thermal expansion properties closer to that of beryllium. A high temperature solder is used to bond a laser diode to the copper layer.
In one embodiment, one of the copper layers is formed into discrete areas or islands to which multiple components are soldered, all with high temperature solders, to form a multi-chip module.


REFERENCES:
patent: 5043775 (1991-08-01), Lee
patent: 5913108 (1999-11-01), Stepehens et al.
patent: 5985684 (1999-11-01), Marshall et al.

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