Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2007-07-30
2010-02-23
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
Reexamination Certificate
active
07668217
ABSTRACT:
The present invention provides a Be-based group II-VI semiconductor laser using an InP substrate and having a stacked structure capable of continuous oscillation at a room temperature. A basic structure of a semiconductor laser is constituted by using a Be-containing lattice-matched II-VI semiconductor above an InP substrate. An active laser, an optical guide layer, and a cladding layer are constituted in a double hetero structure having a type I band line-up in order to enhance the injection efficiency of carriers to the active layer. Also, the active layer, the optical guide layer, and the cladding layer, which are capable of enhancing the optical confinement to the active layer, are constituted, and the cladding layer is constituted with bulk crystals.
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Asatsuma Tsunenori
Fujisaki Sumiko
Kikawa Takeshi
Kishino Katsumi
Nakamura Hitoshi
A. Marquez, Esq. Juan Carlos
Harvey Minsun
Hitachi , Ltd.
King Joshua
Sony Corporation
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