Coherent light generators – Particular active media – Semiconductor
Patent
1992-12-04
1994-01-18
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 45, 372 48, H01S 319
Patent
active
052805352
ABSTRACT:
A semiconductor laser diode comprises a waveguide formed by an active layer sandwiched in between upper and lower cladding layers, wherein the cladding layers comprise a material having a bandgap that differs from that of the active layer. The waveguide is deposited on a structured substrate having a surface pattern that causes the waveguide to be bent near its ends, i.e., near cleaved or etched facets of the completed laser device thereby providing a non-absorbing mirror (NAM) window structure. A laser beam, generated in the center, planar waveguide section, leaves the waveguide at the bend, continuing substantially unabsorbed and undeflected through the wider bandgap cladding layer material towards the mirror facet. An amphoteric dopant, used during growth of the layered waveguide structure, causes a reversal of the conductivity-type within the semiconductor material deposited above inclined surface regions. Thus, a junction serving as current block is formed preventing lateral currents from reaching the facet region.
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Gfeller Fritz
Jaeckel Heinz
Meier Heinz
Balconi-Lamica Michael J.
Epps Georgia Y.
International Business Machines - Corporation
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