Combustion – Burner head cover operatively interrelated with igniter
Patent
1993-05-27
1995-08-29
Breneman, R. Bruce
Combustion
Burner head cover operatively interrelated with igniter
H01L 2120
Patent
active
054459931
ABSTRACT:
A semiconductor laser diode includes a semiconductor substrate, an active layer having a double hetero structure formed on the semiconductor substrate, a first quantum well layer formed between the active layer and the current confinement layer, a second quantum well layer formed on the active layer corresponding to the current injection groove, and a clad layer having its flat surface formed on the current injection groove and the current confinement layer. A method for manufacturing the semiconductor laser diode includes the steps of forming an active layer having a double hetero structure on the semiconductor substrate, selectively forming a current confinement layer on the active layer to form a current injection groove, forming a clad layer having its flat surface on the current injection groove and the current confinement layer.
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Takao Shibutani, et al., "A Novel High-Power Laser Structure with Current-Blocked Regions Near Cavity Facets," IEEE Journal of Quantum Electronics, vol. QE-23, No. 6 (Jun. 1987).
Ahn Hyung S.
Choi Won T.
Lim Jin H.
No Min S.
Seo Joo O.
Breneman R. Bruce
Fleck Linda
Goldstar Co. Ltd.
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