Semiconductor laser diode and method for manufacturing the same

Combustion – Burner head cover operatively interrelated with igniter

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H01L 2120

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active

054459931

ABSTRACT:
A semiconductor laser diode includes a semiconductor substrate, an active layer having a double hetero structure formed on the semiconductor substrate, a first quantum well layer formed between the active layer and the current confinement layer, a second quantum well layer formed on the active layer corresponding to the current injection groove, and a clad layer having its flat surface formed on the current injection groove and the current confinement layer. A method for manufacturing the semiconductor laser diode includes the steps of forming an active layer having a double hetero structure on the semiconductor substrate, selectively forming a current confinement layer on the active layer to form a current injection groove, forming a clad layer having its flat surface on the current injection groove and the current confinement layer.

REFERENCES:
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patent: 4950622 (1990-08-01), Kwon et al.
Takao Shibutani, et al., "A Novel High-Power Laser Structure with Current-Blocked Regions Near Cavity Facets," IEEE Journal of Quantum Electronics, vol. QE-23, No. 6 (Jun. 1987).

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