Semiconductor laser diode

Details Semiconductor laser diode Semiconductor laser diode

2011-03-22

2011-03-22

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010, C372S046010

Reexamination Certificate

active

07912104

ABSTRACT:
A semiconductor laser diode capable of improving reliability and mass-productivity is disclosed. The semiconductor laser diode comprises a first clad layer; a first optical guide layer disposed on the first clad layer; an active layer disposed on the first optical guide layer; a second optical guide layer disposed on the active layer; and a second clad layer disposed on the second optical guide layer, having a greater band gap energy than the second optical guide layer, the band gap energy decreasing as being farther from the second optical guide layer.

REFERENCES:
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patent: 4839899 (1989-06-01), Burnham et al.
patent: 5555271 (1996-09-01), Honda et al.
patent: 6055253 (2000-04-01), Kidoguchi et al.
patent: 6060335 (2000-05-01), Rennie et al.
patent: 6160829 (2000-12-01), Sawano
patent: 6829271 (2004-12-01), Sato et al.

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