Semiconductor laser diode

Details Semiconductor laser diode Semiconductor laser diode

1994-12-23

1997-04-08

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

056195184

ABSTRACT:
The disclosure described a semiconductor laser diode comprising at least a first clad layer, an active layer and a second clad layer disposed in this order on the substrate, and
a buried layer for current blocking disposed at both sides in the cavity direction of the active layer,
at least one of the first clad layer and second clad layer having at least one superlattice in the direction parallel with the substrate, and the average refractive index (nc1) of the first clad layer, the refractive index (na) of the active layer and the average refractive index (nc2) of the second clad layer satisfying the following equations.

REFERENCES:
patent: 5289486 (1994-02-01), Iga et al.
patent: 5355384 (1994-10-01), Inoue et al.
U.S. Patent No. 4,706,254, Nov. 10, 1987, Nojiri et al.
U.S. Patent No. 5,213,995, May 25, 1993, Chen et al.
UK Patent Application GB 2 196789 A, May 5, 1988, Sharp Kabushiki Kaisha.
Japanese Journal of Applied Physics, vol. 30, No. 12B, Dec. 1991, pp. 3865-3872, "600 nm-Range GaInP/AllnP Multi-Quantum-Well (MQW) Lasers Grown on Misorientation Substrates by Gas Source Molecular Beam Epitaxy (GS-MBE)".
Patent Abstracts of Japan, JP58175887, Oct. 15, 1983, Kayane Naoki et al.
Patent Abstracts of Japan, JP60189983, Sep. 27, 1985, N. Kenichi.

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