Semiconductor laser diode

Details Semiconductor laser diode Semiconductor laser diode

1998-03-25

2000-11-28

Font, Frank G.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 500

Patent

active

061544760

ABSTRACT:
A semiconductor laser diode includes a p-type GaAs semiconductor substrate, a p-type region which includes a p-type AlGaAs lower cladding layer, an active layer and an n-type region which includes an n-type AlGaAs upper cladding layer, wherein the n-type AlGaAs upper cladding layer is Al.sub.x Ga.sub.1-x As (x.gtoreq.0.4) having a carrier concentration of no more than 6.times.10.sup.17 cm.sup.-3.

REFERENCES:
patent: 5095489 (1992-03-01), Nagai et al.
patent: 5297158 (1994-03-01), Naiou et al.
patent: 5581570 (1996-12-01), Yoshida et al.
patent: 5761232 (1998-06-01), Nakayama
Shima et al., "0.78- and 0.98-.mu.m Ridge-Waveguide Lasers Buried With AlGaAs Confinement Layer Selectively Grown By Chloride-Assisted MOCVD", IEEE Journal of Selected Topics In Quantum Electronics, vol. 1, No. 2, Jun. 1995, pp. 102-109.

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