Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-08-12
1995-07-25
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 94, 257 96, 257 97, 257183, H01L 3300
Patent
active
054364663
ABSTRACT:
A semiconductor laser diode of a double hetero structure including a semiconductor substrate, a buffer layer, a clad layer of a first conductivity type, an active layer and a clad layer of a second conductivity type, all layers being sequentially formed over the substrate, characterized by an intermediate layer interposed at at least one of a region between the substrate and the first clad layer and a region between the second clad layer and the cap layer, the intermediate layer being adapted to reduce a series resistance component and thus make a flow of current smooth.
REFERENCES:
patent: 5198686 (1993-03-01), Yoshimura
Choi Won J.
Jung Ki W.
Kim Jong S.
Ko Hyun C.
Goldstar Co. Ltd.
Prenty Mark V.
White John P.
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