Semiconductor laser diode

Details Semiconductor laser diode Semiconductor laser diode

2008-05-15

2010-11-30

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S050100

Reexamination Certificate

active

07843980

ABSTRACT:
An inventive semiconductor laser diode includes a Group III nitride semiconductor layered structure having a major crystal growth plane defined by a non-polar or semi-polar-plane. The Group III nitride semiconductor layered structure includes: a p-type cladding layer and an n-type cladding layer; an In-containing p-type guide layer and an In-containing n-type guide layer held between the p-type cladding layer and the n-type cladding layer; and an In-containing light emitting layer held between the p-type guide layer and the n-type guide layer.

REFERENCES:
patent: 6266355 (2001-07-01), Sverdlov
patent: 6614824 (2003-09-01), Tsuda et al.
patent: 7397834 (2008-07-01), Kozaki et al.
patent: 7606278 (2009-10-01), Kuramoto
T. Takeuchi et al., “Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells,” Jpn. J. Appl. Phys. vol. 39 (2000) pp. 413-416.

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