Semiconductor laser diode

Details Semiconductor laser diode Semiconductor laser diode

2008-02-08

2009-12-22

Nguyen, Dung T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S050230, C372S043010

Reexamination Certificate

active

07636378

ABSTRACT:
In an edge emitting laser having a window region with a ridge-waveguide structure, particularly, in a short cavity type of a laser operated with a low current, there has been a problem of its operating current being increased due to current leakage of the window portion. To solve this problem, in the window region, between an n-type substrate and a p-type cladding layer, a semi-insulating semiconductor layer into which Ru is doped is inserted. Alternatively, a stacked structure of a Ru-doped layer and a Fe-doped layer is introduced.

REFERENCES:
patent: 2003/0007535 (2003-01-01), Haase et al.
patent: 2007/0019698 (2007-01-01), Fukuhisa et al.
patent: 2003-110195 (2003-04-01), None
patent: 2004-235182 (2004-08-01), None
patent: 2007-005594 (2007-01-01), None

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