Semiconductor laser diode

Details Semiconductor laser diode Semiconductor laser diode

2007-08-28

2007-08-28

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010

Reexamination Certificate

active

10989434

ABSTRACT:
A semiconductor laser diode is provided, including: an active layer; an upper clad layer formed above the active layer; a first lower clad layer formed below the active layer; a second lower clad layer formed under the first lower clad layer; and a substrate formed under the second lower clad layer, wherein a refractive index of the first lower clad layer is identical with a refractive index of the upper clad layer and is lower than a refractive index of the second lower clad layer.

REFERENCES:
patent: 6072817 (2000-06-01), Adachi et al.
patent: 6160829 (2000-12-01), Sawano
patent: 6278137 (2001-08-01), Shimoyama et al.
patent: 6487226 (2002-11-01), Iwamoto et al.
patent: 6563850 (2003-05-01), Matsumoto et al.
patent: 2003/0198268 (2003-10-01), Jikutani et al.
patent: 2004/0066818 (2004-04-01), Yamamoto et al.
patent: 2005/0069004 (2005-03-01), Watanabe et al.
Soohaeng Cho et al., 600-nm GainP-AlGalnP Quantum-Well Laser Diode Structures With Reduced Vertical Beam Divergence Angle, IEEE Photonics Technology Letters, Mar. 2005, pp. 534-536, vol. 17, No. 3.

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