Semiconductor laser diode

Details Semiconductor laser diode Semiconductor laser diode

2005-03-29

2005-03-29

Leung, Quyen (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046012

Reexamination Certificate

active

06873634

ABSTRACT:
The present invention provides a nitride semiconductor laser by which stable high power room-temperature continuous-wave oscillation in fundamental mode is possible. A semiconductor laser diode comprising: a GaN layer; a first conductive type nitride semiconductor layer formed on said GaN layer and made of AlxGa1-xN(0.04≦x≦0.08); a first conductive type clad layer formed on said first conductive type nitride semiconductor layer and made of nitride semiconductor; a core area formed on said first conductive type clad layer and made of nitride semiconductor, said core area including an active layer to emit light by electric current injection; and a second conductive type clad layer formed on said core area and made of nitride semiconductor.

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