Semiconductor laser diode

Details Semiconductor laser diode Semiconductor laser diode

1979-12-19

1982-09-28

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 15, 357 17, 357 65, 372 45, H01S 319

Patent

active

043521878

ABSTRACT:
A semiconductor laser diode is disclosed with a connection electrode consisting of a chromium/gold alloy on a highly-doped gallium arsenide layer. The gallium arsenide layer is strip-shaped and overlies a further lesser doped layer of gallium aluminum arsenide. The chromium/gold contact has a low-resistance junction only in the region of the more highly doped layer so that a strip-shaped restriction of the current path occurs in the semisconductor body. Accordingly, a laser-active zone which is only strip-shaped is achieved.

REFERENCES:
patent: 4099305 (1978-07-01), Cho et al.
patent: 4121179 (1978-10-01), Chinone et al.
patent: 4206468 (1980-06-01), Carballes

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