Semiconductor laser diode

Details Semiconductor laser diode Semiconductor laser diode

1995-09-01

1998-03-31

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

057346712

ABSTRACT:
A semiconductor laser diode which can be applied to optical fiber amplifiers to attain a high reliability and can generate light having a wavelength of about 1 .mu.m is provided. This semiconductor laser diode is formed on a GaAs substrate and has an active layer comprising a GaInAsP strained quantum well whose energy band gap is smaller than that of GaAs. Barrier layers each comprising GaInAsP whose band gap is greater than that of the active layer are bonded to the active layer through heterojunction. According to this structure, when the active layer and the barrier layers are grown, the amounts of supply of a Ga material and an In material can be controlled in a simple manner and a semiconductor laser diode having a high reliability can be realized.

REFERENCES:
patent: 5228047 (1993-07-01), Matsumoto et al.
patent: 5363392 (1994-11-01), Kasakawa et al.
patent: 5384151 (1995-01-01), Razeghi
patent: 5389396 (1995-02-01), Razeghi
Zbang et al, "GSMBE Growth of GalnAsP on GaAs Substrates and its Application to 0.98 .mu.m Lasers", Journal of Crystal Growth, vol. 127, Nos. 1/4, Feb. 1993, pp. 1033-1036.
Garbuzov et al, "High-Power Buried in GaAsP/GaAs (.lambda.=0.8 .mu.m) Laser Diodes", Applied Physics Letters, vol. 62, No. 10, Mar. 1993, pp. 1062-1064.
Shiau et al, "Low-Threshold 1.3-.mu.m Wavelength, InGaAsP Strained-Layer Multiple Quantum Well Lasers Grown by Gas Source Molecular Beam Eptiaxy", Applied Physics Letters, vol. 65, No. 7, Aug. 1994, pp. 892-894.
Uchida et al, "1.3 .mu.m InGaAs/GaAs Strained Quantum Well Lasers With InGaP Cladding Layer", Electronics Letters, Mar. 1994, vol. 30, No. 7, pp. 563-565.
Fujitsu Laboratories Ltd., "Visible Semiconductor Lasers With Ga1nAsP strained Quantum Well Active Layers", 1993 Autumn Meeting the 54th Meeting of the Japan Society of Applied Physics Extended Abstracts, p. 1049.

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