Semiconductor laser devices, and semiconductor laser modules...

Details Semiconductor laser devices, and semiconductor laser modules... Semiconductor laser devices, and semiconductor laser modules...

2005-03-22

2005-03-22

Leung, Quyen (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

Reexamination Certificate

active

06870871

ABSTRACT:
A semiconductor laser device and module for use in a dense wavelength division multiplexed optical communications system are shown. The laser device preferably has cavity lengths greater than 1000 μm, and compressive strain multi-quantum well active layer, and front-facet reflectivity of less than about 4%. Higher optical outputs by longer cavity lengths are achieved. Preferred modules use these laser diodes with external wavelength-selective reflectors that have narrow bandwidths of 3 nm or less, and which include a plurality of longitudinal mode subpeaks within the bandwidth. Relationships between reflectivity value of the front facet and the peak reflectivity of the wavelength-selective reflector for long cavity length laser device are also disclosed, with the relationships providing higher output power along with a stabilized output spectrum.

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