Semiconductor laser devices

Details Semiconductor laser devices Semiconductor laser devices

2006-09-12

2006-09-12

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

Reexamination Certificate

active

07106775

ABSTRACT:
A low reflective film is formed of, in sequence from a side in contact with a laser chip, a first dielectric film of a refractive index n1and a thickness d1, a second dielectric film of a refractive index n2and a thickness d2, a third dielectric film of a refractive index n3and a thickness d3, and a fourth dielectric film of a refractive index n4and a thickness d4, specifically, aluminum oxide Al2O3with a refractive index n1=1.638 is used for the first dielectric film, silicon oxide SiO2with a refractive index n2=n4=1.489 for the second and fourth dielectric films, tantalum oxide Ta2O5with a refractive index n3=2.063 for the third dielectric film, respectively, resulting in a semiconductor laser device with a reflectance which is stably controllable.

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Buch: “Laser Spectroscopy”, W. Demtroder, Springer Verlag, (1981), pp. 160-165.

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