Semiconductor laser devices

Details Semiconductor laser devices Semiconductor laser devices

1997-07-31

1998-12-01

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

058449310

ABSTRACT:
A semiconductor laser which does not cause a sudden failure due to an electric surge. A ridge that is formed by a GaAs buffer layer, an n-InGaP cladding layer which is lattice-matched to a GaAs substrate, a strained-quantum well active layer, a p-InGaP cladding layer which is lattice-matched to the GaAs substrate, a p-GaAs waveguide layer, a p-InGaP cladding layer which is lattice-matched to the GaAs substrate, and a p-GaAs cap layer is constructed on the n-GaAs substrate by being buried therein by an n-InGaP current-blocking layer. A device stripe is constructed by a current-injected region in the device and current-non-injected regions near facets.

REFERENCES:
patent: 4722088 (1988-01-01), Wolf
patent: 5155738 (1992-10-01), Ijichi et al.
patent: 5388116 (1995-02-01), Ohkubo et al.
patent: 5577063 (1996-11-01), Nagai et al.
M. Sagawa et al., "Advantages of InGaAsP Separate Confinement Layer . . . ", Electronics Letters, Aug. 13, 1992, vol. 28, No. 17.
Y. Sin et al., "High-Power InGaAs-GaAs Strained Quantum Well Lasers . . . ", Journal of Applied Physics, vol. 72, No. 7, Oct. 1, 1992, pp. 3212-3214.
M. Ohkubo et al., "0.98 .mu.m InGaAs-InGaAsP-InGaP GRIN-SCH SL-SQW Lasers . . . ", IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993, pp. 1932-1935.
G. Zhang et al., "Optimization and Characteristics of A1-Free Strained--Layer InGaAs/GaInAsP/ . . . ", IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993, pp. 1943-1949.
M. Sagawa et al., "High Power COD-Free Operation . . . ", Electronics Letters, vol. 30, No. 17, Aug. 1994, pp. 1410-1411.
Sin et al., "InGaAs-GaAs-InGaP Channel Guide . . . ", Elect. Lett. Jun. 18, 1992, vol. 28, No. 13 pp. 1234-1235.

Affiliated with

Also associated with

Rating

Semiconductor laser devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2401293