Semiconductor laser devices

Details Semiconductor laser devices Semiconductor laser devices

1986-04-11

1989-06-20

Davis, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

048415367

ABSTRACT:
This invention discloses a semiconductor laser capable of a high temperature and high output operation by forming a mesa stripe having an active layer in a reverse triangular mesa shape and forming thick semiconductor layers on both sides of the mesa stripe in such a manner that the resulting p-n junctions have a current blocking function. The invention discloses also a semiconductor laser wherein the formation of the p-n junctions described above is made before the formation of the reverse mesa stripe, and ion implantation is introduced in order to form the p-n junctions. Furthermore, the invention relates to transistors and semiconductor lasers using InGaAsP type quaternary compounds as the semiconductor. The quaternary compounds having a composition in which an energy band gap is from 1.2 to 1.4 eV are formed in a thickness of up to 1 .mu.m, and there can be thus obtained semiconductor devices having a small leakage current and being stable with time.

REFERENCES:
patent: 4542511 (1985-09-01), Goodfellow et al.

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