Semiconductor laser device with window regions

Details Semiconductor laser device with window regions Semiconductor laser device with window regions

1992-09-04

1994-09-06

Healy, Brian

Coherent light generators

Particular active media

Semiconductor

372 45, 372 50, 372 19, 372 96, H01S 318, H01S 308

Patent

active

053454600

ABSTRACT:
A semiconductor laser device with window regions according to the present invention is provided, in which a double hetero structure including cladding layers and an active layer sandwiched by the cladding layers is formed on a semiconductor substrate, the double hetero structure is buried in burying layers with a bandgap larger than that of the active layer, and the burying layers form window regions situated at both end facets of the double hetero structure, wherein the window regions have a waveguide structure including a plurality of semiconductor layers with different bandgaps.

REFERENCES:
patent: 4447905 (1984-05-01), Dixon et al.
patent: 4546479 (1985-10-01), Ishikawa et al.
patent: 4546480 (1985-10-01), Burnham et al.
patent: 4575851 (1986-03-01), Seki et al.
patent: 5038185 (1991-08-01), Thornton
patent: 5153890 (1992-10-01), Bona et al.
patent: 5260230 (1993-11-01), Kondo
Hirata et al., Electronic Letters (Jun. 4, 1987) 23(12):627-628.

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