Semiconductor laser device with multi-directional reflector arra

Coherent light generators – Particular resonant cavity – Specified cavity component

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372 45, 372 92, 372108, 372 96, H01S 319

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054328128

ABSTRACT:
A microcavity semiconductor laser disclosed therein includes a double-heterostructure section including an intermediate active layer sandwiched between a first or lower cladding layer and a second or upper cladding layer above a semiconductive substrate. A first multi-layered reflector section is arranged between the substrate and the double-heterostructure section to have its reflectance which becomes maximum near the oscillation wavelength of the laser. The upper cladding layer is semi-spherically formed. A three-dimensional optical reflector covers the double-heterostructure section, for controlling spontaneous emission obtained in the double-heterostructure section along various directions, and for increasing the coupling ratio of spontaneous emission with a specific laser mode, thereby to decrease the threshold current.

REFERENCES:
patent: 4999842 (1991-03-01), Huang et al.
patent: 5206872 (1993-04-01), Jewell et al.

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