Semiconductor laser device with decreased light intensity noise

Details Semiconductor laser device with decreased light intensity noise Semiconductor laser device with decreased light intensity noise

1986-12-30

1988-03-15

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 48, H01S 319

Patent

active

047317922

ABSTRACT:
In a TRS (twin ridge substrate) type semiconductor laser, reflectivity at both facets of the resonator at the oscillation wavelength is selected to be higher than the reflectivity of the semiconductor crystal of the laser device, but smaller than 1, thereby stabilizing the light oscillation with a low S/N ratio.

REFERENCES:
patent: 4092659 (1978-05-01), Ettenberg
patent: 4280107 (1981-07-01), Scifres et al.

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