Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant material
Reexamination Certificate
2006-11-28
2006-11-28
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant material
C257S103000
Reexamination Certificate
active
07141829
ABSTRACT:
A semiconductor device (100) has, as its well layer, a III–V compound semiconductor layer (106) containing, as V-group components, nitrogen, antimony, and one or more V-group elements other than nitrogen and antimony to improve emission characteristics. Such a III–V compound semiconductor layer is formed by repeating a cycle including a process of simultaneously supplying a plurality of sources containing at lest indium, and a process of simultaneously supplying a plurality of sources not containing indium but containing antimony.
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Nadav Ori
Nixon & Vanderhye P.C.
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