Semiconductor laser device with an optical guide layer

Details Semiconductor laser device with an optical guide layer Semiconductor laser device with an optical guide layer

1995-03-01

2000-04-25

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 3085

Patent

active

060552530

ABSTRACT:
A semiconductor laser device having an active layer, a pair of cladding layers interposing the active layer and a multi-quantum barrier provided between one of the pair of cladding layers and the active layer is provided, and the multi-quantum barrier includes barrier layers and well layers being alternated with each other. The semiconductor laser device also including an optical guide layer confining light generated in a quantum well layer, and the optical guide layer being undoped.

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Agrawal et al, Semiconductor Lasers, Van Nostrand Reinhold, New York, p. 455, 1993.
Iga et al., "Electron Reflectance of Multiquantum Barrier (MQB)", Electronics Letters, Sep. 11, 1986 vol. 22, No. 19, pp. 1008-1009.
T. Takagi, et al., "Potential Barrier Height Analysis of AlGaInP Multi-Quantum Barrier (MQB)", Japanese Journal of Applied Physics, vol. 29, No. 11, pp. L 1977-L 1980 (Nov. 1990).
T. Takagi et al., "Design and Photoluminescence Study on a Multiquantum Barrier", IEEE Journal of Quantum Electronics, vol. 27, No. 6, pp. 1511-1519 (Jun. 1991).
T. Takagi et al., "Photoluminescence Study of Electron Wave Confinement in Multi-Quantum Barrier (MQB)", Japanese Journal of Applied Physics, vol. 29, No. 11, pp. L 1969-L 1972 (Nov. 1990).

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